NCP51810 高速栅极驱动器旨在满足驱动半桥功率拓扑中的增强模式 (e-mode) GaN HEMT 功率开关的严格要求。NCP51810 提供短且匹配的传输延迟以及 -3.5 V 至 +150 V（典型值）的高端驱动器共模电压范围。为了完全保护 GaN 功率晶体管的栅极免受过大的电压应力，两个驱动级都采用专用的电压调节器来精确保持栅极源驱动信号幅度。NCP51810 提供重要的保护功能，例如独立的欠压锁定 (UVLO) 和 IC 热关断。

The NCP51810 high-speed gate driver is designed to meet the stringent requirements of driving enhancement mode (e-mode) GaN HEMT power switches in half-bridge power topologies. The NCP51810 offers short and matched propagation delays as well as -3.5 V to +150 V (typical) common mode voltage range for the high-side drive. To fully protect the gate of the GaN power transistor against excessive voltage stress, both drive stages employ a dedicated voltage regulator to accurately maintain the gate-source drive signal amplitude. The NCP51810 offers important protection functions such as independent under-voltage lockout (UVLO) and IC thermal shutdown.