介绍了采用商用 1200V 碳化硅 (SiC) MOSFET 和肖特基二极管的 100KHz、10KW 交错式硬开关升压
DC/DC 转换器的参考设计和性能。 SiC 功率半导体的超低
开关损耗使开关频率比硅实现显着提高
说明
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Reference design and performance of a 100KHz, 10KW interleaved hard-switching boost DC/DC converter utilizing commercial 1200V Silicon Carbide (SiC) MOSFETs and Schottky diodes are presented. Ultra-low switching losses of the SiC power semiconductors enables switching frequencies to be increased significantly over silicon implementations
主要特色
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Conversion Type
DC to DC
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Input Voltage
300 to 450 V
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Output Voltage
450 to 650 V
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Output Power
10000 W
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Efficiency
99 %
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Topology
Interleaved Boost